Electrical Characteristics Analysis of High-Efficiency SnS Solar Cells

Ali Sadoun, Nassiba Allag

Abstract


The simulation of SnS homojunction solar cells involved systematically adjusting key parameters, such as doping concentration and layer thickness, to optimize their photovoltaic performance. The study identified that optimal efficiency is achieved with a carrier concentration of 5.5 × 1015 cm⁻³ in the front n-type region, a 500 nm thick n-layer, and a 500 nm thick p+ layer with a carrier concentration of 3 × 10¹⁶ cm⁻³. Under these conditions, the solar cell demonstrated excellent electrical characteristics, including an open-circuit voltage (Voc) of 0.90 V, a short-circuit current density (Jsc) of 34.20 mA/cm², a fill factor (FF) of 0.829, and an efficiency (η) of 25.71%. These results underscore the importance of precise control over material properties and structural dimensions in achieving high-efficiency SnS-based solar cells, positioning SnS as a promising material for future photovoltaic applications.


Keywords


Simulation, homojunction, Solar cells, SnS.

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References


A. Hima, A. Khechekhouche, and I. Kemerchou, "Enhancing of CH3NH3PbI3 based solar cell efficiency by ETL engineering," International Journal of Energetica, vol. 5, no. 1, 2020, pp. 27-30. doi: 10.47238/ijeca.v5i1.119.

Weilin W., Gaolin L., Zhenghua J., Ye Z., Tianjiao H., Jie Y., Zengyong C., "Structural, optical and flexible properties of CH₃NH₃PbI₃ perovskite films deposited on paper substrates," Optical Materials, vol. 114, 2021, pp. 110926. https://doi.org/10.1016/j.optmat.2021.110926.

I. Kemerchou, F. Rogti, B. Benhaoua, N. Lakhdar, A. Hima, O. Benhaoua, and A. Khechekhouche, "Processing temperature effect on optical and morphological parameters of organic perovskite CH3NH3PbI3 prepared using spray pyrolysis method," Journal of Nano- and Electronic Physics, vol. 11, no. 3, 2019, pp. 03011. doi: 10.21272/jnep.11(3).03011.

A. Hima, A. Khouimes, A. Rezzoug, M. Ben Yahkem, A. Khechekhouche, and I. Kemerchou, "Simulation and optimization of CH3NH3PbI3 based inverted planar heterojunction solar cell using SCAPS software," International Journal of Energetica, vol. 4, no. 1, 2019, pp. 56-59. doi: 10.47238/ijeca.v4i1.92.

A. Hima, A. Khechekhouche, I. Kemerchou, N. Lakhdar, B. Benhaoua, F. Rogti, I. Telli, and A. Saadoun, "GPVDM simulation of layer thickness effect on power conversion efficiency of CH3NH3PbI3 based planar heterojunction solar cell," International Journal of Energetica, vol. 3, no. 1, 2018, pp. 37-41. doi: 10.47238/ijeca.v3i1.64.

M. Benchehima, H. Abid, A. Sadoun, and A. C. Chaouche, "Optoelectronic properties of aluminum bismuth antimony ternary alloys for optical telecommunication applications: First principles calculation," Computational Materials Science, vol. 155, pp. 224-234, 2018.

I. Kemerchou, A. Khechekhouche, A. Timoumi, F. Rogti, A. Hima, A. Sadoun, A. Tliba, and M. Aida, "Study of the chemical structure of CH3NH3PbI3 peroveskite films deposited on different substrates," Journal of Materials Science: Materials in Electronics, vol. 32, pp. 3303-3312, 2021.

A. Sadoun, S. Mansouri, M.Chellali, N. Lakhdar, A. Hima, Z.Benamara, "Hafnium dioxide effect on the electrical properties of M/n-GaN structure," Materials Science-Poland, vol. 38, pp. 165-173, 2020.

A. Sadoun, S. Mansouri, M. Chellali, A. Hima and Z. Benamara, "The effect of introduction of HfO2 on the electrical characterization of the Pt/HfO2/n-GaN," 2018 International Conference on Communications and Electrical Engineering (ICCEE), El Oued, Algeria, 2018, pp. 1-4, doi: 10.1109/CCEE.2018.8634446.

T. Garmim, S. Chahib, L. Soussi, R. Mghaiouini, Z. E. Jouad, A. Louardi, O. Karzazi, M. E. Jouad, E. Hlil, and B. Hartiti, "Optical, electrical and electronic properties of SnS thin films deposited by sol gel spin coating technique for photovoltaic applications," Journal of Materials Science: Materials in Electronics, vol. 31, pp. 20730-20741, 2020.

A. Sadoun and I. Kemerchou, "Extraction of the electrical parameters of the Au/InSb/InP Schottky diode in the temperature range (300 K-425 K)." International Journal of Energetica, vol 5, pp. 31-36, 2020. doi:http://dx.doi.org/10.47238/ijeca.v5i1.120

A. Sadoun, I. Kemerchou, S. Mansouri, and M. Chellali, "The electrical properties of Au/GaN and PEDOT: PSS/GaN diodes." International Journal of Energetica, vol , 5, pp. 37-41, 2020. doi:http://dx.doi.org/10.47238/ijeca.v5i2.137

A. Sadoun, S. Mansouri, M. Chellali, A. Hima, and Z. Benamara, "The effect of introduction of HfO2 on the electrical characterization of the Pt/HfO 2/n-GaN," in 2018 International Conference on Communications and Electrical Engineering (ICCEE), 2018, pp. 1-4.

A. Sadoun, S. Mansouri, M. Chellali, N. Lakhdar, A. Hima, and Z. Benamara, "Investigation, analysis and comparison of current-voltage characteristics for Au/Ni/GaN Schottky structure using IVT simulation," Materials Science-Poland, vol. 37, pp. 496-502, 2019.

Y. Gan, X. Bi, Y. Liu, B. Qin, Q. Li, Q. Jiang, and P. Mo, "Numerical investigation energy conversion performance of tin-based perovskite solar cells using cell capacitance simulator," Energies, vol. 13, p. 5907, 2020.

A. Sanchez-Juarez, A. Tiburcio-Silver, and A. Ortiz, "Fabrication of SnS2/SnS heterojunction thin film diodes by plasma-enhanced chemical vapor deposition," Thin Solid Films, vol. 480, pp. 452-456, 2005.

S. Lin, X. Li, H. Pan, H. Chen, X. Li, Y. Li, and J. Zhou, "Numerical analysis of SnS homojunction solar cell," Superlattices and Microstructures, vol. 91, pp. 375-382, 2016.

A. Arulanantham, S. Valanarasu, A. Kathalingam, M. Shkir, and H.-S. Kim, "An investigation on SnS layers for solar cells fabrication with CdS, SnS 2 and ZnO window layers prepared by nebulizer spray method," Applied Physics A, vol. 124, pp. 1-12, 2018.

S. Badyakar and C. Das, "Numerical simulations on a-Si: H/SnS/ZnSe based solar cells," Materials Today: Proceedings, vol. 62, pp. 5275-5282, 2022.

A. Basak, A. Mondal, and U. P. Singh, "Impact of substrate temperature on the structural, optical and electrical properties of thermally evaporated SnS thin films," Materials Science in Semiconductor Processing, vol. 56, pp. 381-385, 2016.




DOI: http://dx.doi.org/10.47238/ijeca.v9i1.245

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