### Extraction of the electrical parameters of the Au/InSb/InP Schottky diode in the temperature range (300 K- 425 K)

#### Abstract

*In this work, we have presented a theoretical study of Au/InSb/InP Schottky diode based on current-voltage (I-V)** measurement in the temperature range ( 300 K- 425 K). Electrical parameters of Au/InSb/InP such as barrier height (Φ _{b}), ideality factor and series resistance have been calculated by employing the conventional*

*(I-V)*

*, Norde, Cheung and Chattopadhyay methods. Measurements show that the Schottky barrier height (SBH), ideality factor and series resistance, RS for Au/InSb/InP Schottky diode in the temperature range (300 K–425 K) are 0.602-0.69eV, 1.683-1.234 and 84.54-18.95 (Ω), respectively. These parameters were extracted using Atlas-Silvaco-Tcad logical.*

#### Full Text:

PDF#### References

S.-J. Yoon and T.-Y. Seong, "Interfacial reactions to form high-barrier-height ITO-based Schottky contacts on p-type GaN using a Ti interlayer", vol. 741, 2018, pp. 999-1005.

[K. Zeghdar, L. Dehimi, A. Saadoune, and N. Sengouga, "Inhomogeneous barrier height effect on the current–voltage characteristics of an Au/n-InP Schottky diode", 2015, vol. 36, p. 124002.

R. Van Meirhaeghe, W. Laflere, and F. Cardon, "Influence of defect passivation by hydrogen on the Schottky barrier height of GaAs and InP contacts", vol. 76, 1994, pp. 403-406.

A. Karabulut, A. Türüt, and Ş. Karataş, "The electrical and dielectric properties of the Au/Ti/HfO 2/n-GaAs structures," 2017.

M. Benchehima, H. Abid, and K. Benchikh, "First-principles calculations of the structural and optoelectronic properties of BSb1− x Asx ternary alloys in zinc blende structure", vol. 198, 2017, pp. 214-228.

S. Adachi, "Properties of semiconductor alloys: group-IV, III-V and II-VI semiconductors", vol. 28: John Wiley & Sons, 2009.

A. Venter, D. Murape, J. Botha, and F. D. Auret, "Transport characteristics of Pd Schottky barrier diodes on epitaxial n-GaSb as determined from temperature dependent current–voltage measurements", vol. 574, 2015, pp. 32-37.

W.-C. Huang, T.-C. Lin, C.-T. Horng, and Y.-H. Li, "The electrical characteristics of Ni/n-GaSb Schottky diode", vol. 16, 2013, pp. 418-423.

S. Asubay, Ö. Güllü, and A. Türüt, "Determination of the laterally homogeneous barrier height of metal/p-InP Schottky barrier diodes", vol. 83, 2009, pp. 1470-1474.

J. Schleeh, G. Alestig, J. Halonen, A. Malmros, B. Nilsson, P. Nilsson, J. P. Starski, N. Wadefalk, H. Zirath, and J. Grahn, "Ultralow-power cryogenic InP HEMT with minimum noise temperature of 1 K at 6 GHz", vol. 33, 2012, pp. 664-666.

A. Konczykowska, J.-Y. Dupuy, F. Jorge, M. Riet, V. Nodjiadjim, and H. Mardoyan, "Extreme speed power-DAC: Leveraging InP DHBT for ultimate capacity single-carrier optical transmissions", vol. 36, 2018, pp. 401-407.

F. Acar, A. Buyukbas-Ulusan, and A. Tataroglu, "Analysis of interface states in Au/ZnO/p-InP (MOS) structure", pp. 1-8, 2018.

K. Hattori and Y. Torii, "A new method to fabricate Au/n-type InP Schottky contacts with an interfacial layer", vol. 34, 1991, pp. 527-531.

A. Singh, K. Reinhardt, and W. Anderson, "Temperature dependence of the electrical characteristics of Yb/p‐InP tunnel metal‐insulator‐semiconductor junctions", vol. 68, 1990, pp. 3475-3483.

T. Enoki, H. Yokoyama, Y. Umeda, and T. Otsuji, "Ultrahigh-speed integrated circuits using InP-based HEMTs", vol. 37, 1998, p. 1359.

K. Pande, "Characteristics of MOS solar cells built on (n-type) InP substrates," vol. 27, 1980, pp. 631-634.

D. Korucu and T. Mammadov, "Temperature-dependent current-conduction mechanisms in Au/n-InP Schottky barrier diodes (SBDs) ", vol. 14, 2012, p. 41.

A. Fritah, A. Saadoune, L. Dehimi, and B. Abay, "Investigation on the non-ideal behaviour of Au/n-InP Schottky diodes by the simulation of I–V–T and C–V–T characteristics", vol. 96, 2016, pp. 2009-2026.

N. Balaram, V. R. Reddy, P. S. Reddy, V. Janardhanam, and C.-J. Choi, " chemical states and electrical properties of Au/CuO/n-InP heterojunction with a cupric oxide interlayer", vol. 152, 2018, pp. 15-24.

S. Tiagulskyi, R. Yatskiv, and J. Grym, "Electrical Characterization of Graphite/InP Schottky Diodes by I–V–T and C–V Methods", , 2018,pp. 1-5.

D. S. Atlas, "Atlas user’s manual," Silvaco International Software, Santa Clara, CA, USA, 2005.

R. Padma, B. P. Lakshmi, M. S. P. Reddy, and V. R. Reddy, "Electrical and structural properties of Ir/Ru Schottky rectifiers on n-type InGaN at different annealing temperatures", vol. 56, 2013, pp. 64-76.

V. R. Reddy, V. Manjunath, V. Janardhanam, Y.-H. Kil, and C.-J. Choi, "Electrical properties and current transport mechanisms of the Au/n-GaN Schottky structure with solution-processed high-k BaTiO3 interlayer", vol. 43, 2014, pp. 3499-3507.

S. Gholami and M. Khakbaz, "Measurement of IV characteristics of a PtSi/p-Si Schottky barrier diode at low temperatures", vol. 5, 2011.

A. Sadoun, S. Mansouri, M. Chellali, N. Lakhdar, A. Hima, and Z. Benamara, "Investigation, analysis and comparison of current-voltage characteristics for Au/Ni/GaN Schottky structure using IVT simulation", vol. 37, 2019, pp. 496-502.

M. Soylu and B. Abay, "Barrier characteristics of gold Schottky contacts on moderately doped n-InP based on temperature dependent I–V and C–V measurements", vol. 86, 2009, pp. 88-95.

T. Çakıcı, M. Sağlam, and B. Güzeldir, "The comparison of electrical characteristics of Au/n-InP/In and Au/In2S3/n-InP/In junctions at room temperature", vol. 193, 2015, pp. 61-69.

S. Cheung and N. Cheung, "Extraction of Schottky diode parameters from forward current‐voltage characteristics," vol. 49, 1986, pp. 85-87.

H. Norde, "A modified forward I‐V plot for Schottky diodes with high series resistance", vol. 50, 1979, pp. 5052-5053.

A. Kocyigit, I. Orak, Z. Çaldıran, and A. Turut, "Current–voltage characteristics of Au/ZnO/n-Si device in a wide range temperature," vol. 28, 2017, pp. 17177-17184.

S. Ali, M. Sedik, C. Mohammed, L. Nacereddine, H. Abdelkader, and B. Zineb, "Hafnium dioxide effect on the electrical properties of M/n-GaN structure", vol. 38, 2020, pp. 165-173.

P. Chattopadhyay, "A new technique for the determination of barrier height of Schottky barrier diodes", vol. 38, 1995, pp. 739-741.

Ş. Karataş, N. Yildirim, and A. Türüt, "Electrical properties and interface state energy distributions of Cr/n-Si Schottky barrier diode", vol. 64, 2013, pp. 483-494.

A. Sadoun, S. Mansouri, M. Chellali, A. Hima, and Z. Benamara, "The effect of introduction of HfO2 on the electrical characterization of the Pt/HfO 2/n-GaN," in 2018 International Conference on Communications and Electrical Engineering (ICCEE) ", 2018, pp. 1-4.

V. Janardhanam, A. A. Kumar, V. R. Reddy, and P. N. Reddy, "Study of current–voltage–temperature (I–V–T) and capacitance–voltage–temperature (C–V–T) characteristics of molybdenum Schottky contacts on n-InP (1 0 0) ", vol. 485, 2009, pp. 467-472.

J. Sullivan, R. Tung, M. Pinto, and W. Graham, "Electron transport of inhomogeneous Schottky barriers: A numerical study", vol. 70, 1991, pp. 7403-7424.

Ş. Aydoğan, M. Sağlam, and A. Türüt, "On the barrier inhomogeneities of polyaniline/p-Si/Al structure at low temperature," vol. 250, 2005, pp. 43-49.

H. Dogan and S. Elagoz, "Temperature-dependent electrical transport properties of (Au/Ni)/n-GaN Schottky barrier diodes," vol. 63, 2014, pp. 186-192.

Ö. Güllü, Ş. Aydoğan, and A. Türüt, "Fabrication and electrical characteristics of Schottky diode based on organic material," vol. 85, 2008, pp. 1647-1651.

Y. Ocak, M. Kulakci, T. Kılıçoğlu, R. Turan, and K. Akkılıç, "Current–voltage and capacitance–voltage characteristics of a Sn/Methylene Blue/p-Si Schottky diode," vol. 159, 2009, pp. 1603-1607.

DOI: http://dx.doi.org/10.47238/ijeca.v5i1.120

### Refbacks

- There are currently no refbacks.

Copyright (c) 2020 International Journal of Energetica

This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.

The content of this journal is licenced under a Creative Commons Attribution-NonCommercial 4.0 International License