Systematic Optimization and Performance Analysis of High-Efficiency SnS Homojunction Solar Cells

Ali Sadoun, Zied Driss, Husam Alrehaili

Abstract

This study presents a systematic numerical simulation to optimize the photovoltaic performance of n-SnS/p⁺-SnS/p-SnS homojunction solar cells. By meticulously adjusting device parameters—including layer thickness and doping profiles we identified an optimal configuration that achieves a power conversion efficiency (PCE) of 27.60%. The peak performance metrics, defined by an open-circuit voltage (Voc) of 0.938 V, a short-circuit current density (Jsc) of 33.834 mA/cm², and a fill factor (FF) of 86.95%, are realized with a front-region carrier concentration of 5 × 10¹⁵ cm⁻³ and a p⁺-layer carrier concentration of 3 × 10¹⁶ cm⁻³ at a thickness of 500 nm. Furthermore, the sensitivity of the device to minority-carrier lifetime and surface recombination velocities was investigated to define the critical thresholds for high-efficiency fabrication. These findings provide a robust design roadmap for the development of sustainable, cost-effective, and high-performance SnS-based thin-film solar cells.

Keywords

SnS; solar cells; Current-voltage; numerical analysis; temperature; series resistance

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References

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DOI: http://dx.doi.org/10.47238/ijeca.v11i1.319

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